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MJD32C Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części MJD32C
Szczegółowy opis  Low voltage PNP power transistor
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MJD32C Arkusz danych(HTML) 3 Page - STMicroelectronics

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MJD32C
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
2.1
Electrical characteristic (curves)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE =-100V
-20
µA
ICEO
Collector cut-off current
(IB = 0)
VCB =-60V
-50
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB =-5V
-0.1
mA
VCEO(sus)
(1)
1.
Note (1) Pulsed duration = 300 ms, duty cycle £1.5%
Collector-emitter
sustaining voltage
(IB = 0)
IC =-30mA
-100
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC =-3A
_
IB =-375mA
-1.2
V
VBE(on)
(1)
Base-emitter on voltage
IC =-3A
_
VCE=-4V
-1.8
V
hFE
DC current gain
IC =-1A
VCE =-4V
IC = -3A
VCE =-4V
25
10
50
Figure 2.
Safe operating area
Figure 3.
Derating curve



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