2

TA= 25

°C, Vdd = 4.5 V, Idd = 200mA, Zo=50 Ω, Pin=5dBm

Typical Distribution of Conversion Gain and Output Power based on 1000 parts

Notes.

4. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25

°C.

5. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc.

Notes.

1. Operation in excess of any of these conditions may result in

permanent damage to this device. The absolute maximum ratings

for Vdd, Idd and Pin were determined at an ambient temperature

of 25°C unless noted otherwise.

2. Ambient operational temperature TA=25

°C unless noted

3. Channel-to-backside Thermal Resistance (Tchannel = 34

°C) as

measured using infrared microscopy. Thermal Resistance at

backside temp. (Tb) = 25

°C calculated from measured data.

Conversion Gain at 30GHz

StDev = 0.46

Output Power at 30GHz

StDev = 0.39

Sym Parameters/Condition

Unit

Max

Vdd

Drain to Ground Voltage

V

5

Idd

Drain Current

mA

300

Pin

RF CW Input Power Max

dBm

15

Tch

Max channel temperature

C

+150

Tstg

Storage temperature

C

-65 +150

Tmax Maximum Assembly Temp

C

260 for 20s

Sym

Parameter and

Test Condition

Unit

Min Typ

Max

Idd

Drain Supply Current

under any RF power

drive and temp.

mA

200

250

Vd

Drain Supply Voltage

V

3.5

4.5

5

θjc

C/W

45

Symbol

Parameters and Test Conditions

Frequency

Units

Minimum

Maximum

Typical

Freq

Operational Frequency

GHz

30

Gain

30

dB

14

18.5

16

Pout

30

dBm

19

23.5

21

FS

Fundamental Suppression

30

dBc

60

3H Sup

3rd Harmonic Suppression

dBc

50