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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SPD08N10 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SPD08N10 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor SPD08N10 www.iscsemi.com 1 FEATURES · Drain Current -ID= 8.4A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V APPILICATIONS · DC/DC Converters · Motor Drivers · Switching Regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous TC=25℃ 8.4 A TC=100℃ 5.4 A IDM Drain Current-Pulse 33.6 A PD Total Dissipation 40 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.1 ℃ /W |
Podobny numer części - SPD08N10 |
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Podobny opis - SPD08N10 |
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