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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ISCF80133 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF80133 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCF80133 eq SCT30N120 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Very Low RDS(on) Over the Entire Temperature Rangee · Very Fast and Robust Intrinsic Body Diode · Low Capacitance APPLICATIONS · Solar Inverters · Motor Drives · DC-DC Converters · Induction Heating And Welding Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+25 V ID Drain Current-Continuous 45 A Drain Current-Continuous@Tc=100℃ 34 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 270 W TJ Max. Operating Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.65 ℃ /W |
Podobny numer części - ISCF80133 |
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Podobny opis - ISCF80133 |
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