IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

V

10

100

1000

0.1

1

10

100

Pulse Width - Seconds

0.001

0.01

0.1

1

V

0

5

10

15

20

25

30

35

40

50

100

250

500

1000

2500

5000

Gate Charge - nC

0

20406080

100

0

2

4

6

8

10

12

Crss

Coss

Ciss

V

I

f = 1MHz

T

10ms

1ms

100ms

DC

D=0.1

D=0.05

D=0.02

D=0.01

Single pulse

D = Duty Cycle

0.1ms

D=0.2

V

0.2

0.4

0.6

0.8

1.0

1.2

0

5

10

15

20

25

30

T

T

D=0.5

Figure 7. Gate Charge

Figure 9. Source Current vs. Source to Drain Voltage

Figure 8. Capacitance Curves

Figure 11. Transient Thermal Resistance

Figure 10. Forward Bias Safe Operating Area

IXFH/IXFT 12N100Q

IXFH/IXFT 10N100Q