MJD122 datasheet(2/6 Pages) STMICROELECTRONICS

Numer części	MJD122

Szczegółowy opis	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	6 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collector Cut -of f

Current (IE =0)

VCB =100 V

µA

ICEO

Collector Cut -of f

Current (IB =0)

VCE =50 V

µA

ICEX

Collector Cut -of f

Current

VCE =100 V VBE =-1.5V

VCE =100 V VBE =-1.5V TC =125

500

µA

IEBO

Emitter Cut -off

Current (IC =0)

VEB =5 V

VCEO(sus)

Collector-Emit ter

Sustaining Voltage

IC = 30 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =4 A

IB =16 mA

IC =8 A

IB =80 mA

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =8 A

IB =80 mA

4.5

VBE(on)

∗ Base-Emitter Voltage IC =4 A

VCE =4 V

2.8

hFE

∗

DC Current Gain

IC =4 A

VCE =4 V

IC =8 A

VCE =4 V

1000

100

12000

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curve

MJD122 MJD127

2/6

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