MSC81325M datasheet(1/3 Pages) STMICROELECTRONICS

Numer części	MSC81325M

Szczegółowy opis	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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Producent	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

October 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2NLFL (S042)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER BALLASTED

.

RUGGEDIZED VSWR

∞:1

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 325 W MIN. WITH 6.7 dB GAIN

DESCRIPTION

The MSC81325M device is a high power pulsed

transistor specifically designed for DME/TACAN

avionics applications.

This device is capable of withstanding an infinite

load VSWR at any phase angle under full rated

conditions. Low RF thermal resistance and semi-

automatic bonding techniques ensure high relia-

bility and product consistency.

The MSC81325M is housed in the industry-stand-

ard AMPAC™ metal/ceramic hermetic package

with internal input/output matching structures.

PIN CONNECTION

BRANDING

81325M

ORDER CODE

MSC81325M

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

(TC

≤ 100˚C)

880

W

IC

Device Current*

24

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.17

°C/W

*Applies only to rated RF amplifier operation

MSC81325M

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3

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