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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FMP08N50E Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FMP08N50E Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor FMP08N50E www.iscsemi.com V2.0 1 FEATURES · Drain Current -ID= 7.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.79Ω(Max)@VGS= 10V APPLICATIONS · Motor drive · DC-DC converter · power switch and solenoid drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Pulsed 30 A PD Total Dissipation 105 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.19 ℃ /W |
Podobny numer części - FMP08N50E |
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Podobny opis - FMP08N50E |
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