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PD57030S Arkusz danych(PDF) 1 Page - STMicroelectronics |
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PD57030S Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() 1/4 TARGET DATA May 2000 PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57030 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030’s su- perior linearity performance makes it an ideal so- lution for base station applications. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030 XPD57030 PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ±20 V ID Drain Current 4 A PDISS Power Dissipation (@ Tc = 70 0C) 52.8 W Tj Max. Operating Junction Temperature 165 0C TSTG Storage Temperature -65 to 175 0C THERMAL DATA (TCASE =70 0C) Rth(j-c) Junction-Case Thermal Resistance 1.8 0C/W |
Podobny numer części - PD57030S |
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Podobny opis - PD57030S |
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