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IXTN3N250L Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXTN3N250L Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc N-Channel MOSFET Transistor IXTN3N250L www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 2500 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 3.0 -- 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A -- -- 10 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ± 200 nA IDSS Zero Gate Voltage Drain Current VDS=2000V; VGS= 0 -- -- 50 µA VSD Diode Forward On-voltage IS= 3A ;VGS= 0 -- -- 1.5 V PACKAGE OUTLINE Dimensions in mm PRODUCT DISCLAIMER ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. |
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