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MBRF20L60CT Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF20L60CT Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode MBRF20L60CT www.iscsemi.com 1 FEATURES · Low Power Loss/High Efficiency · High Surge Capacity · Guard−Ring for Stress Protection APPLICATIONS · Power Supply − Output Rectification · Power Management · Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V IF(AV) Average Rectified Forward Current (Rated VR-20Khz Square Wave)-50% duty cycle Per Diode 10 A IFSM Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Per Diode 160 A TJ Operating Junction Temperature -40~150 ℃ Tstg storage temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance, junction-to-case 5.2 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 10A -- 0.6 V IR Reverse leakage current VR = VRRM -- 380 uA |
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