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Elektronische Bauelemente
SSG9435
-5.3A, -30V,RDS(ON) 50m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
-0.037
-1.0
-
3.0
100
-1
-5
50
90
28
3
7
9
15
75
40
745
440
350
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Ω
Ω
ID=-4.6A
VDS=-15V
VGS=-10V
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 ,ID=-1mA
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
-0.75
_
IS=-2.1A, VGS=0V.
V
-1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
2
Forward Transconductance
Gfs
S
20
VDS=-10V, ID=-8A
_
_
_
_
_
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
VD=VG=0V, VS=-1.2V
_
_
_
_
Is
ISM
A
A
-2.1
-50
o
C
o
C
o
C
o
C
o
2
2
2
Ω
01-Jun-2002 Rev. A
Page
2 of 5
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