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PRELIMINARY DATA

May 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STB160NF3LL

N-CHANNEL 30V - 0.0026

STripFET™ II POWER MOSFET

s

s

LOW THRESHOLD DRIVE

s

ULTRA LOW ON-RESISTANCE

s

LOGIC LEVEL DEVICE

s

100% AVALANCHE TESTED

s

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

TYPE

ST160NF3LL

30 V

<0.003

Ω

160 A

1

3

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(*) Current Limited by Package

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 15

V

160

A

160

A

Drain Current (pulsed)

640

A

300

W

Derating Factor

2

W/°C

Single Pulse Avalanche Energy

1.2

J

Storage Temperature

-55 to 175

°C

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM