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CR05AS Arkusz danych(PDF) 2 Page - Mitsubishi Electric Semiconductor

Numer części CR05AS
Szczegółowy opis  LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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Producent  MITSUBISHI [Mitsubishi Electric Semiconductor]
Strona internetowa  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CR05AS Arkusz danych(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
V2. Soldering with ceramic plate (25mm
× 25mm × t0.7).
V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1k
Ω resistance between the gate and cathode.
B
20 ~ 50
Item
IGT (
µA)
A
1 ~ 30
C
40 ~ 100
ELECTRICAL CHARACTERISTICS
Test conditions
Tj=125
°C, VRRM applied
Tj=125
°C, VDRM applied, RGK=1kΩ
Ta=25
°C, ITM=1.5A, instantaneous value
Ta=25
°C, VD=6V, IT=0.1A V4
Tj=125
°C, VD=1/2VDRM, RGK=1kΩ
Tj=25
°C, VD=6V, IT=0.1A V4
Tj=25
°C, VD=12V, RGK=1kΩ
Junction to ambient
V2
Unit
mA
mA
V
V
V
µA
mA
°C/W
Typ.
—
—
—
—
—
—
—
—
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.9
0.8
—
100
V3
3
70
3V
DC
IGS
IGT
6V
DC
60
Ω
VGT
2
1
TUT
1k
Ω
RGK
A3
A2
V1
A1
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1k
Ω)
V4. IGT, VGT measurement circuit.
SWITCH
100
23
5 7 101
4
2
23
5 7 102
44
6
8
10
3
1
5
7
9
0
5
01
4
23
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
Ta = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES



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