RT3NDDM datasheet(1/3 Pages) ISAHAYA

Numer części	RT3NDDM

Szczegółowy opis	Composite Transistor With Resistor

PDF	3 Pages

Scroll/Zoom	100%

Producent	ISAHAYA [Isahaya Electronics Corporation]

Strona internetowa	http://www.idc-com.co.jp

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DESCRIPTION

RT3NDDM is a composite transistor built with two

RT1N237 chips in SC-88 package.

FEATURE

Silicon NPN epitaxial type

Built in bias resistor (R1=2.2kΩ，R2=47kΩ)

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

PRELIMINARY

RT3NDDM

Composite Transistor With Resistor

For Switching Application

Silicon NPN Epitaxial Type

OUTLINE DRAWING

Unit：mm

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

50

V

VEBO

Emitter to Base voltage

10

V

VCEO

Collector to Emitter voltage

50

V

IC

Collector current

100

mA

ICM

Peak Collector current

200

mA

PC

Collector dissipation（Total, Ta=25℃）

150

mW

Tj

Junction temperature

＋

150

℃

Tstg

Storage temperature

-55∼＋150

℃

MARKING

D

N D

.

① ② ③

⑥ ⑤ ④

ISAHAYA ELECTRONICS CORPORATION

TERMINAL

CONNECTOR

①：

EMITTER1

②：

BASE1

③：

COLLECTOR2

④：

EMITTER2

⑤：

BASE2

⑥

:COLLECTOR1

JEITA：SC-88

1.25

2.1

①

②

③

⑤

④

⑥

RTr2

RTr1

R1

R2

①

②

③

④

⑤

⑥

Podobny numer części - RT3NDDM

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Isahaya Electronics Cor...	RT3N33M	57Kb / 3P	Composite Transistor With Resistor
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RT3NDDM Arkusz danych(PDF) 1 Page - Isahaya Electronics Corporation

RT3NDDM Arkusz danych(HTML) 1 Page - Isahaya Electronics Corporation

Podobny numer części - RT3NDDM

Podobny opis - RT3NDDM

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