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2STW4466 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części 2STW4466
Szczegółowy opis  High power NPN epitaxial planar bipolar transistor
PDF  10 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STW4466 Arkusz danych(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STW4466
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Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 100V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6V
0.1
µA
V(BR)EBO
Collector-emitter breakdown
voltage (IC = 0)
IE = 1mA
6V
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
IC = 100µA
100
V
V(BR)CEO
Collector-emitter breakdown
voltage (IB = 0)
IC = 50mA
80
V
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 2A
IB = 200mA
IC = 6A
IB = 600mA
0.6
1.5
V
V
VBE (1)
Base-emitter voltage
VCE = 5V
IC = 5A
1.5
V
hFE
DC current gain
IC = 2A
VCE = 4V
50
120
fT
Transition frequency
IC = 0.5A
VCE = 12V
20
MHz
CCBO
Collector-base capacitance
IE = 0 VCB = 10V f = 1MHz
50
pF
ton
tstg
toff
Turn-on time
Storage time
Fall time
IC = 3A
VCC = 30V
IB1 = -IB2 = 0.3A
0.15
1.5
0.1
ns
ns
ns



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