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STD2NC60 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STD2NC60
Szczegółowy opis  N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh™ II MOSFET
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NC60 Arkusz danych(HTML) 3 Page - STMicroelectronics

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STD2NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300V, ID = 1.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
13
ns
tr
Rise Time
9
ns
Qg
Total Gate Charge
VDD = 480V, ID = 3A,
VGS = 10V
15
22
nC
Qgs
Gate-Source Charge
6.2
nC
Qgd
Gate-Drain Charge
5.6
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 3A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
11
ns
tf
Fall Time
13
ns
tc
Cross-over Time
18
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
2
A
ISDM (2)
Source-drain Current (pulsed)
8
A
VSD (1)
Forward On Voltage
ISD = 3A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 3A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
500
ns
Qrr
Reverse Recovery Charge
2.1
µC
IRRM
Reverse Recovery Current
8.5
A
Thermal Impedance
Safe Operating Area



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