STTH16003 datasheet(3/7 Pages) STMICROELECTRONICS

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STTH16003

Characteristics

3/7

Table 5.

Recovery characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

IF = 1 A, dIF/dt = 50 A/µs,

VR = 30 V

tfr

Forward recovery time

Tj = 25 °C

IF = 80 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

1000

VFP

Forward recovery voltage

IRM

Reverse recovery current

Tj = 125 °C

IF = 60 A, dIF/dt = 200 A/µs,

Vcc = 200 V

Sfactor

0.3

Figure 1.

Conduction losses versus

average current (per diode)

Figure 2.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (90% confidence, per

diode)

10203040

5060708090

100

P1(W)

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

IF(av) (A)

δ=tp/T

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

200

IFM(A)

Tj=125°C

(Typical values)

Tj=25°C

Tj=125°C

VFM(V)

1E-3

1E-2

1E-1

1E+0

5E+0

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

tp(s)

100 150 200 250 300 350 400 450 500

IRM(A)

VR=200V

Tj=125°C

IF=2xIF(av)

IF=IF(av)

IF=0.5xIF(av)

dIF/dt(A/µs)

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