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ESDALC6V1M6 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części ESDALC6V1M6
Szczegółowy opis  4- and 5-line low capacitance Transil arrays for ESD protection
PDF  11 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDALC6V1M6 Arkusz danych(HTML) 3 Page - STMicroelectronics

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ESDALC6V1M6, ESDALC6V1-5M6
Characteristics
3/11
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 3.
Peak pulse power versus
exponential pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
P
PP
[T
j
init ial] /P
PP
[T
j
init ial= 2 5
]
T
j(°C)
°C
10
100
1000
1
10
100
P
PP(W)
T
j initial = 25°C
10
100
1000
1
10
100
P
PP(W)
T
j initial = 25°C
tP(µs)
tP(µs)
Figure 4.
Clamping voltage versus peak
pulse current (typical values,
8/20 µs waveform)
Figure 5.
Forward voltage drop versus peak
forward current (typical values)
0.1
1.0
10.0
100.0
0
1020
3040
50
60
70
I
PP(A)
8/20µs
T
j initial =25°C
0.1
1.0
10.0
100.0
0
1020
3040
50
60
70
I
PP(A)
8/20µs
T
j initial =25°C
VCL(V)
VCL(V)
1.E-03
1.E-02
1.E-01
1.E+00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
FM
(A)
T
j =25°C
T
j =125°C
V
FM (V)
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
C(pF)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)
VR(V)
1
10
100
25
50
75
100
125
I
R
[T
j
]/ I
R
[T
j
=2 5
]
V
R =3V
°C
T j(°C)



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