STP11NM60FP datasheet(1/12 Pages) STMICROELECTRONICS

Numer części	STP11NM60FP

Szczegółowy opis	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™ Power MOSFET

PDF	12 Pages

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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May 2003

STP11NM60 - STP11NM60FP

STB11NM60 - STB11NM60-1

N-CHANNEL 600V - 0.4

Ω-11A TO-220/TO-220FP/D2PAK/I2PAK

MDmesh™Power MOSFET

(*)Limited only by maximum temperature allowed

(1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS,TJ<TJMAX

TYPICAL RDS(on) = 0.4Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP11NM60

STP11NM60FP

STB11NM60

STB11NM60-1

600 V

< 0.45

Ω

< 0.45

Ω

< 0.45

Ω

< 0.45

Ω

11 A

Symbol

Parameter

Value

Unit

STP(B)11NM60(-1)

STP11NM60FP

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

11

11 (*)

A

ID

Drain Current (continuous) at TC = 100°C

7

7 (*)

A

IDM ( )

Drain Current (pulsed)

44

44 (*)

A

PTOT

Total Dissipation at TC = 25°C

160

35

W

Derating Factor

1.28

0.28

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

1

2

3

I2PAK

1

2

3

TO-220FP

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

Podobny numer części - STP11NM60FP

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STP11NM60FP	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET 12-Jan-2007
Inchange Semiconductor ...	STP11NM60FP	309Kb / 2P	isc N-Channel Mosfet Transistor

More results

Podobny opis - STP11NM60FP

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STP11NM60A	367Kb / 11P	N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh™ Power MOSFET Mar-2002
	STP11NM80	582Kb / 14P	N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET 20-Oct-2005
	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET 17-Feb-2005
	STB11NM60FD	495Kb / 17P	N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) 26-Jul-2006
	STP11NM60	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET 12-Jan-2007
	STGB6NC60HD	424Kb / 18P	N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH™IGBT 26-Apr-2007
	STB6NK60Z	558Kb / 17P	N-channel 600V - 1廓 - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET 23-May-2007
	STB16NM50N	554Kb / 18P	N-channel 500 V - 0.21 Ω - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP 04-Mar-2008
	STB13NM50N	573Kb / 18P	N-channel 500 V - 0.250 Ω - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK 04-Mar-2008
	STP30NM50N	628Kb / 18P	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 23-Sep-2008

More results

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