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L6731DTR Arkusz danych(PDF) 11 Page - STMicroelectronics |
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L6731DTR Arkusz danych(HTML) 11 Page - STMicroelectronics |
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11 / 23 page ![]() L6731D Device description 11/23 5.3 Bypassing the LDO to avoid the voltage drop with low Vcc If VCC ≈ 5 V the internal LDO works in dropout with an output resistance of about 1 Ω. The maximum LDO output current is about 100 mA and so the output voltage drop is 100 mV, to avoid this the LDO can be bypassed. 5.4 Internal and external references It is possible to set the internal/external reference and the switching frequency by setting the proper voltage at the DDR-IN pin. The maximum value of the external reference is 2.5 V (typ.): ● VEAREF from 0 % to 80 % of VCCDR -> External reference/FSW = 250 kHz ● VEAREF from 80 % to 95 % of VCCDR -> VREF = 0.6 V/FSW = 500 kHz ● VEAREF from 95 % to 100 % of VCCDR -> VREF = 0.6 V/FSW = 250 kHz Providing an external reference from 0V to 450mV the output voltage will be regulated but some restrictions must be considered: ● OV threshold saturates to a minimum value of 300 mV (OV is tracking the reference; tracking small references will result in a narrow threshold reducing noise immunity) ● The under-voltage-protection doesn't work; ● The PGOOD signal remains low; To set the resistor divider it must be considered that a 100 k pull-down resistor is integrated into the device (see Figure 5.). Finally it must be taken into account that the voltage at the DDR-IN pin is captured by the device at the start-up when V CC is about 4 V. Figure 4. Bypassing the LDO |
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