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STP22NF03L Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STP22NF03L
Szczegółowy opis  N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET™ POWER MOSFET
PDF  8 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP22NF03L Arkusz danych(HTML) 1 Page - STMicroelectronics

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Aug 2000
STP22NF03L
N-CHANNEL 30V - 0.038
Ω - 22A TO-220
STripFET™ POWER MOSFET
(1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V
s
TYPICAL RDS(on) = 0.038Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE AT 100°C
s
APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size
™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP22NF03L
30V
<0.05
Ω
22A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
±15
V
ID
Drain Current (continuos) at TC = 25°C
22
A
ID
Drain Current (continuos) at TC = 100°C
16
A
IDM (q)
Drain Current (pulsed)
88
A
PTOT
Total Dissipation at TC = 25°C
45
W
Derating Factor
0.3
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (2)
Single Pulse Avalanche Energy
200
mJ
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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