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STA335BWS Arkusz danych(PDF) 15 Page - STMicroelectronics

Numer części STA335BWS
Szczegółowy opis  2.1-channel high-efficiency digital audio system
PDF  68 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA335BWS Arkusz danych(HTML) 15 Page - STMicroelectronics

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STA335BWS
Electrical specifications
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3.3
Electrical specifications - digital section
3.4
Electrical specifications - power section
The specifications given in this section are with the operating conditions VCC = 18 V, f =
1 kHz, fsw = 384 kHz, Tamb = 25° C, RL = 8 Ω, unless otherwise specified.
Table 5.
Electrical specifications - digital section
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Iil
Low level input current without pull device Vi = 0 V
-10
10
µA
Iih
High level input current without pull device
Vi = VDD_DIG =
3.6 V
-10
10
µA
Vil
Low level input voltage
0.2*VDD_DIG
V
Vih
High level input voltage
0.8*VDD_DIG
V
Vol
Low level output voltage
Iol = 2 mA
0.4*VDD_DIG
V
Voh
High level output voltage
Ioh = 2 mA
0.8*VDD_DIG
V
Ipu
Pull current
-25
66
125
µA
Rpu
Equivalent pull resistance
50
K
Ω
Table 6.
Electrical specifications - power section
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
Output power BTL
VCC = 18 V
THD = 1%
16
W
THD = 10%
20
Output power SE
VCC = 18V
THD = 1%
4
W
THD = 10%
5
RdsON
Power Pchannel/Nchannel
MOSFET (total bridge)
ld = 1.5 A
180
250
m
Ω
gP
Power Pchannel RdsON
matching
ld = 1.5 A
95
%
gN
Power Nchannel RdsON
matching
ld = 1.5 A
95
%
Idss
Power Pchannel/Nchannel
leakage ldss
VCC = 20 V
10
µA
gP
Power Pchannel RdsON
Matching
ld = 1.5 A
95
%
gN
Power Nchannel RdsON
Matching
ld = 1.5 A
95
%
Idss
Power Pchannel/Nchannel
leakage
VCC = 20 V
10
µA
ILDT
Low current dead time (static)
Resistive load(1)
8
15
ns



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