STP45NE06 datasheet(1/6 Pages) STMICROELECTRONICS

Numer części	STP45NE06

Szczegółowy opis	N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

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STP45NE06

STP45NE06FP

N - CHANNEL 60V - 0.022

Ω - 45A - TO-220/TO-220FP

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.022

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

™ "

strip-based

process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP45NE06

STP45NE06FP

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

60

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

o C45

25

A

ID

Drain Current (continuous) at Tc = 100

oC

31

17.5

A

IDM(

•)

Drain Current (pulsed)

180

A

Ptot

Total Dissipation at Tc = 25

oC100

35

W

Derating Factor

0.67

0.23

W/

oC

VISO

Insulation Withstand Voltage (DC)



2000

V

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP45NE06

STP45NE06FP

60 V

< 0.028

Ω

< 0.028

Ω

45 A

25 A

June 1998

TO-220

TO-220FP

1

2

3

1

2

3

1/6

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