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2SC5702 Arkusz danych(PDF) 2 Page - Renesas Technology Corp

Numer części 2SC5702
Szczegółowy opis  Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
PDF  15 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5702 Arkusz danych(HTML) 2 Page - Renesas Technology Corp

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2SC5702
Rev.2.00 Aug 10, 2005 page 2 of 14
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown voltage
V(BR)CBO
15
18.5
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
1
µA
VCB = 10 V, IE = 0
Collector cutoff current
ICEO
1
mA
VCE = 4 V, RBE =
∞
Emitter cutoff current
IEBO
10
mA
VEB = 1.5V, IC = 0
DC current transfer ratio
hFE
80
120
160
VCE = 1 V, IC = 5 mA
Collector output capacitance
Cob
0.85
1.2
pF
VCB = 1 V, IE = 0
f = 1 MHz
Gain bandwidth product
fT
6.5
8.0
GHz
VCE = 1 V, IC = 5 mA
f = 1 MHz
Power gain
PG
11
13
dB
VCE = 1 V, IC = 5 mA
f = 900 MHz
Noise figure
NF
1.05
1.9
dB
VCE = 1 V, IC = 5 mA
f = 900 MHz



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