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STS4DNF60 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STS4DNF60
Szczegółowy opis  N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET
PDF  5 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS4DNF60 Arkusz danych(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 15 V
ID = 2 A
RG = 4.7
Ω
VGS = 4.5 V
TBD
TBD
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V
ID = 4 A
VGS = 4.5 V
15
4
4
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V
ID = 4 A
RG = 4.7
Ω
VGS = 4.5 V
TBD
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
4
16
A
A
VSD (
∗)
Forward On Voltage
ISD = 4 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A
di/dt = 100 A/
µs
Vr = 20 V
Tj = 150
oC
TBD
TBD
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STS4DNF60L
3/5



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