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2SC5945 Arkusz danych(PDF) 2 Page - Renesas Technology Corp

Numer części 2SC5945
Szczegółowy opis  Si NPN Epitaxial High Frequency Medium Power Amplifier
PDF  36 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5945 Arkusz danych(HTML) 2 Page - Renesas Technology Corp

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2SC5945
Rev.3.00 Aug 03, 2006 page 2 of 35
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
DC current transfer ratio
hFE
110
150
190
VCE = 3 V, IC = 100 mA
Reverse Transfer Capacitance
Cre
1.0
pF
VCB = 2 V, IE = 0, f = 1 MHz,
emitter grounded
Transition Frequency
fT
15.5
GHz
VCE = 3 V, IC = 100 mA,
f = 1 GHz
Maximum Available Gain
MAG
9
dB
VCE = 3 V, IC = 100 mA,
f = 2.4 GHz
Power Gain
PG
4
6
dB
Power Added Efficiency
PAE
30
40
%
VCE = 3.3 V, ICq = 100 mA,
f = 2.4 GHz, Pin= +20 dBm
1dB Compression Point at output
P1dB
+24
dBm
VCE = 3.3 V, ICq = 100 mA,
f = 2.4 GHz
1dB Compression Point at output
P1dB
+26
dBm
VCE = 3.3 V, ICq = 250 mA,
f = 2.4 GHz
Main Characteristics
500
400
300
200
100
12
3
4
5
0
IB = 0.5 mA
0
50
100
150
200
1.5
1.0
0.5
1.5 mA
2.5 mA
3.5 mA
1.0 mA
2.0 mA
3.0 mA
4.0 mA
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Collector Power Dissipation Curve
Ambient Temperature Ta (°C)
*(40 x 40 x 1 mm)
Value on PCB



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