STS4DPFS30L datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STS4DPFS30L

Szczegółowy opis	P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

PDF	8 Pages

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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October 2000

STS4DPFS30L

P-CHANNEL 30V - 0.07

Ω - 4A SO-8

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION

This product associates the latest low voltage

STripFET™ in p-channel version to a low drop

Schottky diode. Such configuration is extremely ver-

satile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and cel-

lular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

MAIN PRODUCT CHARACTERISTICS

MOSFET

VDSS

RDS(on)

ID

30 V

< 0.08

Ω

4 A

SCHOTTKY

IF(AV)

VRRM

VF(MAX)

3 A

30 V

0.51 V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

4A

ID

Drain Current (continuos) at TC = 100°C

3.4

A

IDM (q)

Drain Current (pulsed)

16

A

PTOT

Total Dissipation at TC = 25°C

1.6

W

Symbol

Parameter

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

30

V

IF(RMS)

RMS Forward Current

20

A

IF(AV)

Average Forward Current

TL = 125°C

δ = 0.5

3A

IFSM

Surge Non Repetitive Forward Current

tp = 10 ms

Sinusoidal

75

A

IRRM

Repetitive Peak Reverse Current

tp = 2

µs

F = 1 kHz

1A

IRSM

Non Repetitive Peak Reverse Current

tp = 100

µs1

A

dv/dt

Critical Rate Of Rise Of Reverse Voltage

10000

V/

µs

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

and current has to be reversed

SO-8

INTERNAL SCHEMATIC DIAGRAM

Podobny numer części - STS4DPFS30L

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STMicroelectronics	STS4DPFS20L	259Kb / 8P	P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER Apr-2002
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