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STP160N75F3 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STP160N75F3 Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 75 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC = 100°C 120 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 330 W Derating factor 2.2 W/°C dv/dt (3) 3. ISD < 120A, di/dt < 1100 A/µs, VDD < 60V, TJ < TJMAX Peak diode recovery voltage slope 20 V/ns EAS (4) 4. Starting TJ = 25°C, ID = 60A, VDD = 25V Single pulse avalanche energy 600 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit TO-220 TO-247 D²PAK Rthj-case Thermal resistance junction-case max 0.45 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 -- °C/W Rthj-pcb(1) 1. When mounted on 1 inch ² FR4 2 oz Cu Thermal resistance junction-pcb -- -- 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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