STP185N10F3 datasheet(3/12 Pages) STMICROELECTRONICS

Numer części	STP185N10F3

Szczegółowy opis	N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220 STripFET™Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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3 / 12 page

STB185N10F3 - STP185N10F3

Electrical ratings

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS=0)

100

VGS

Gate-source voltage

± 20

(1)

Current limited by package.

Drain current (continuous) at TC = 25 °C

120

(1)

Drain current (continuous) at TC=100 °C

120

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

480

PTOT

Total dissipation at TC = 25 °C

300

Derating factor

2.0

W/°C

dv/dt

Peak diode recovery voltage slope

TBD

V/ns

EAS

(3)

Starting Tj=25°C, ID=60 A, VDD=40 V

Single pulse avalanche energy

TBD

Tstg

Operating junction temperature

storage temperature

-55 To 175

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

D²PAK

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb(1)

When mounted on FR-4 board, on 1inch², 2oz Cu.

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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