STS5PF30L

P - CHANNEL 30V - 0.053

Ω - 5A SO-8

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique ”Single Feature Size

™

” strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarka-

ble manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGMENT IN CELLULAR

PHONES

®

INTERNAL SCHEMATIC DIAGRAM

November 1999

SO-8

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

30

V

Ω)30

V

G ate-source Voltage

± 20

V

Drain Current (continuous) at Tc = 25

Single O perat ion

Single O perat ion

5

3

A

A

•)

Drain Current (pulsed)

20

A

2.5

W

(

•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

TYPE

STS5PF 30L

30 V

< 0.060

Ω

5A

1/6