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HAF2014 Arkusz danych(PDF) 5 Page - Renesas Technology Corp

Numer części HAF2014
Szczegółowy opis  Silicon N Channel MOSFET Series Power Switching
PDF  8 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2014 Arkusz danych(HTML) 5 Page - Renesas Technology Corp

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HAF2014
Rev.3.00 Apr 27, 2006 page 5 of 7
0.10
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.02
0.04
0.06
0.08
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
10 V
VGS = 4 V
ID = 20 A
ID = 20 A
5 A, 10 A
5 A, 10 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
50
10
20
5
1
2
0.5
1
2
5
10
20
50
Tc = –25°C
75°C
VDS = 10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
0.5
1
2
5
10
20
50
1000
500
200
50
100
20
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
10
20
304050
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Coss
VGS = 0
f = 1 MHz
50
0
Source to Drain Voltage VSD (V)
0
10
20
30
40
Reverse Drain Current vs.
Source to Drain Voltage
0.4
0.8
1.2
1.6
2.0
VGS = 5 V
1000
500
200
50
100
20
10
12
10
520
50
0.5
Drain Current
ID (A)
Switching Characteristics
Pulse Test
tf
tr
td(off)
td(on)
0 V
VGS = 5 V, VDD = 30 V
PW = 300
µs, duty ≤ 1 %



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