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2SC4499L Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części 2SC4499L
Szczegółowy opis  Silicon NPN Triple Diffused
PDF  9 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4499L Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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2SC4499(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
0.5
A
Collector peak current
I
C(peak)
1.0
A
Collector power dissipation
P
C
0.75
W
P
C*
1
10
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
V
I
C = 0.1 A, RBE = ∞
L = 100 mH
Emitter to base breakdown
voltage
V
(BR)EBO
10
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
——
20
µAV
CB = 400 V, IE = 0
I
CEO
50
V
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
12
V
CE = 5 V, IC = 0.25 A*
1
h
FE2
5—
V
CE = 5 V, IC = 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
1.0
V
I
C = 0.25 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
1.5
V
I
C = 0.25 A, IB = 0.05 A*
1
Turn on time
t
on
1.0
µsI
C = 0.5 A, IB1 = –IB2 = 0.1 A,
Storage time
t
stg
2.0
µsV
CC ≅ 150 V
Fall time
t
f
1.0
µs
Note:
1. Pulse test.



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