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2SC5593 Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części 2SC5593
Szczegółowy opis  Silicon NPN Epitaxial High Frequency Low Noise Amplifier
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5593 Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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2SC5593
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
4.5
V
Emitter to base voltage
V
EBO
1V
Collector current
I
C
12
mA
Collector power dissipation
Pc
50
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
12
——V
I
C = 10 µA , IE = 0
Collector cutoff current
I
CBO
——
1
µAV
CB = 10 V , IE = 0
Collector cutoff current
I
CEO
——
1
µAV
CE = 4 V , RBE = ∞
Emitter cutoff current
I
EBO
——
12
µAV
EB = 1 V , IC = 0
DC current transfer ratio
h
FE
60
100
140
V
V
CE = 2 V , IC = 10 mA
Collector output capacitance
Cob
—
0.16
0.4
pF
V
CB = 2 V , IE = 0
f = 1 MHz
Gain bandwidth product
f
T
20
23
—
GHz
V
CE = 2 V , IC = 10 mA
f = 2 GHz
Power gain
PG
14
18
—
dB
V
CE = 2 V , IC = 10 mA
f = 1.8 GHz
Noise figure
NF
—
1.8
2.3
dB
V
CE = 2 V , IC = 3 mA
f = 1.8 GHz



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