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HTT1127E Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części HTT1127E
Szczegółowy opis  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1127E Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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HTT1127E
Rev.1.00 Aug 10, 2005 page 4 of 8
Q1 Main Characteristics
100
10
100
200
0
1
20
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
VCE = 1 V
01
2
3
4
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
20
30
40
50
10
0
0.4
0.6
1.0
Typical Forward Transfer Characteristics
Base to Emitter Voltage VBE (V)
0.2
0.8
VCE = 1 V
10
20
30
40
50
IB = 50 µA
100
µA
150
µA
200
µA
250
µA
300
µA
350
µA
400
µA
450
µA
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
1.0
Emitter ground
f = 1 MHz
0.5
0.8
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
f = 1 GHz
VCE = 2 V
Collector Current IC (mA)
Noise Figure vs. Collector Current
6
4
3
2
1
0
1
2
5
10
20
50
100
5
VCE = 1 V
f = 900 MHz
VCE = 1 V
VCE = 2 V
VCE = 1 V



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