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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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HSG2001 Arkusz danych(PDF) 1 Page - Renesas Technology Corp |
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HSG2001 Arkusz danych(HTML) 1 Page - Renesas Technology Corp |
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1 / 25 page  Rev.2.00, Apr.20.2004, page 1 of 24 HSG2001 SiGe NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0168-0200Z Rev.2.00 Apr.20.2004 Features • High Transition Frequency fT = 20 GHz typ. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ. f = 1.8 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. Outline CMPAK-4 1. Emitter 2. Collector 3. Emitter 4. Base 1 4 3 2 Note: Marking is “VF-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 13 V Collector to emitter voltage VCEO 5V Emitter to base voltage VEBO 1.5 V Collector current IC 100 mA Collector power dissipation Pc 450 Note mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Value on PCB ( FR-4 : 20 x 20 x 1.0mm Double side ) |
Podobny numer części - HSG2001 |
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