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HSG2002 Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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HSG2002 Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
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2 / 25 page ![]() HSG2002 Rev.3.00 Jun 21, 2006 page 2 of 24 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer ratio hFE 170 240 320 VCE = 3 V, IC = 100 mA Reverse Transfer Capacitance Cre 1.0 pF VCB = 3 V, IE = 0, f = 1 MHz emitter grounded Transition Frequency fT 28.5 GHz VCE = 3 V, IC = 250 mA f = 1 GHz Maximum Stable Gain MSG 9.0 10.5 dB VCE = 3 V, IC = 250 mA, f = 5.8 GHz, Maximum Available Gain MAG 15 dB VCE = 3 V, IC = 250 mA, f = 2.4 GHz, Maximum Available Gain MAG 7 dB VCE = 3 V, IC = 250 mA, f = 5.8 GHz, Power Gain PG 5.5 dB VCE = 3.6 V, ICq = 100 mA, f = 5.8 GHz, Pin=+20 dBm 1dB Compression Point at output P1dB +25 dBm VCE = 3.6 V, ICq = 100 mA, f = 5.8 GHz Saturation Output Power Po(sat) +27 dBm VCE = 3.6 V, ICq = 100 mA f = 5.8 GHz, Pin =+25dBm Main Characteristics 0 50 100 150 200 Collector Power Dissipation Curve Ambient Temperature Ta (°C) 2100 1400 700 *(4 x 4 x 1mm) on PCB |
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