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HSG2004 Arkusz danych(PDF) 2 Page - Renesas Technology Corp

Numer części HSG2004
Szczegółowy opis  SiGe HBT High Frequency Medium Power Amplifier
PDF  13 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSG2004 Arkusz danych(HTML) 2 Page - Renesas Technology Corp

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HSG2004
Rev.4.00 Jun 21, 2006 page 2 of 12
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
DC current transfer ratio
hFE
170
240
320
VCE = 3 V, IC = 30 mA
Reverse Transfer Capacitance
Cre
0.6
pF
VCB = 3 V, IE = 0, f = 1 MHz,
emitter grounded
Transition Frequency
fT
30.0
GHz
VCE = 3 V, IC = 30 mA,
f = 1 GHz
Maximum Stable Gain
MSG
14
15.5
dB
VCE = 3 V, IC = 30 mA,
f = 5.8 GHz
Maximum Available Gain
MAG
21
dB
VCE = 3 V, IC = 30 mA,
f = 2.4 GHz
Maximum Available Gain
MAG
12
dB
VCE = 3 V, IC = 30 mA,
f = 5.8 GHz
Power Gain
PG
11.5
dB
VCE = 3.6 V, Iidle = 30 mA,
f = 5.8 GHz, Pin = +0 dBm
1dB Compression Point at output
P1dB
+14.5
dBm
VCE = 3.6 V, Iidle = 30 mA,
f = 5.8 GHz
Saturation Output Power
Po(sat)
+22
dBm
VCE = 3.6 V, Iidle = 30 mA,
f = 5.8 GHz, Pin = +0 dBm
Main Characteristics
0
50
100
150
200
Collector Power Dissipation Curve
Ambient Temperature
Ta (°C)
1500
1000
500
*(4 x 4 x 1mm) on PCB



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