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BB503C Arkusz danych(PDF) 5 Page - Renesas Technology Corp

Numer części BB503C
Szczegółowy opis  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB503C Arkusz danych(HTML) 5 Page - Renesas Technology Corp

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BB503C
Rev.5.00 Aug 10, 2005 page 5 of 10
200
150
100
50
0
50
100
150
200
0
12
3
4
5
20
16
12
8
4
VG2S = 4 V
VG1 = VDS
20
16
12
8
4
0
12
3
4
5
20
16
12
8
4
0
12
34
5
VDS = 5 V
RG = 33 kΩ
VDS = 5 V
RG = 47 kΩ
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
R G
=
22
kΩ
33
kΩ
47
kΩ
68 kΩ
100 kΩ
2 V
VG2S = 1 V
4 V
3 V
VG2S = 1 V
3 V
4 V
2 V
20
16
12
8
4
0
12
3
4
5
VDS = 5 V
RG = 68 kΩ
0
12
3
4
5
30
24
18
12
6
VDS = 5 V
RG = 33 kΩ
f = 1 kHz
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
2 V
VG2S = 1 V
3 V
4 V
2 V
3 V
VG2S = 1 V



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