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BCR10CS Arkusz danych(PDF) 9 Page - Renesas Technology Corp

Numer części BCR10CS
Szczegółowy opis  MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
PDF  12 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR10CS Arkusz danych(HTML) 9 Page - Renesas Technology Corp

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Mar. 2002
The product guaranteed maximum junction
temperature 150
°C (See warning.)
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100
23
101
57 102 23 5 7 103 23 5 7 104
7
5
3
2
101
7
5
3
5
2
7
5
10–1
3
2
VGD = 0.1V
PGM = 5W
VGM = 10V
VGT = 1.5V
IGM = 2A
IRGT I
IFGT I, IRGT III
PG(AV) =
0.5W
102
5
101
7
2
3
103
5
7
2
3
–60
–20
20
60
100
160
140
–40
0
40
80
120
IFGT I
IRGT I, IRGT III
101
103
7
5
3
2
102
7
5
4
4
3
2
–60
–20
20
60
100
160
140
–40
0
40
80
120
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
23
10–1
57 100 23 5 7 101 23 5 7 102
23
102
57 103
1.0
2
32
24
20
12
4
0
16
8
2
0
4
6
10
12
14
8
16
28
160
120
100
60
20
0
16
0
2
6
10
14
40
80
140
48
12
TYPICAL EXAMPLE
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE CHARACTERISTICS
(
Ι, ΙΙ AND ΙΙΙ)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)



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