STW20NM50 datasheet(1/8 Pages) STMICROELECTRONICS

Numer części	STW20NM50

Szczegółowy opis	N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh™ Power MOSFET

PDF	8 Pages

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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August 2002

STW20NM50

N-CHANNEL 500V - 0.20

Ω - 20A TO-247

MDmesh™Power MOSFET

n

TYPICAL RDS(on) = 0.20Ω

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

100% AVALANCHE TESTED

n

LOW INPUT CAPACITANCE AND GATE

CHARGE

n

LOW GATE INPUT RESISTANCE

n

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW20NM50

500V

< 0.25

Ω

20 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

20

A

ID

Drain Current (continuous) at TC = 100°C

12.6

A

IDM (l)

Drain Current (pulsed)

80

A

PTOT

Total Dissipation at TC = 25°C

214

W

Derating Factor

1.44

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

1

2

3

TO-247

INTERNAL SCHEMATIC DIAGRAM

Podobny numer części - STW20NM50

Producent	Numer części	Arkusz danych	Szczegółowy opis
Inchange Semiconductor ...	STW20NM50	351Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STW20NM50FD	248Kb / 8P	N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh™ Power MOSFET with FAST DIODE Jun-2002
Inchange Semiconductor ...	STW20NM50FD	324Kb / 2P	Isc N-Channel MOSFET Transistor
STMicroelectronics	STW20NM50	182Kb / 8P	N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET Feb-2004

More results

Podobny opis - STW20NM50

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STB20NM50FD	287Kb / 7P	N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh™ Power MOSFET With FAST DIODE Nov-2001
	STP20NM50	532Kb / 16P	N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET 05-Sep-2005
	STW20NB50	86Kb / 8P	N - CHANNEL 500V - 0.22ohm - 20A - TO-247 PowerMESH MOSFET Oct-1999
	STW20NM50FD	248Kb / 8P	N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh™ Power MOSFET with FAST DIODE Jun-2002
	STW20NM60	256Kb / 8P	N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh™ Power MOSFET Aug-2002
	STW26NM50	234Kb / 9P	N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh™ Power MOSFET 24-Jun-2004
	STW47NM50	117Kb / 6P	N-CHANNEL 500V - 0.065ohm - 45A TO-247 MDmesh™ Power MOSFET Jan-2003
	STB20NM60-1	440Kb / 18P	N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET 27-Aug-2007
Unisonic Technologies	20N50	142Kb / 4P	20A, 500V N-CHANNEL POWER MOSFET
STMicroelectronics	STW20NM50	182Kb / 8P	N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET Feb-2004

More results

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