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STH8NA80 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STH8NA80
Szczegółowy opis  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PDF  6 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH8NA80 Arkusz danych(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =400 V
ID =4 A
RG =4.7
Ω
VGS =10 V
20
28
28
38
ns
ns
(di/dt)on
Turn-on Current Slope
VDD =640 V
I D =8 A
RG =47
Ω
VGS =10 V
170
A/
µs
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 400 V
ID =8 A
VGS =10 V
75
10
35
100
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =640 V
ID =8 A
RG =4.7
Ω
VGS =10 V
18
20
25
25
28
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
7. 2
28. 8
A
A
VSD (
∗)
Forward On Voltage
ISD =7.2 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =7.5 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
850
17
40
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STW8NA80 STH8NA80FI
3/6



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