STZT2222 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rthj-tab

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Collecor Tab

Max

83.3

oC/W

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

Tamb = 125

µA

ICEX

Collector Cut-off

Current (VBE = -3V)

VCE = 60 V

for STZT2222A

IBEX

Base Cut-off Current

(VBE = -3V)

VCE = 60 V

for STZT2222A

IEBO

Emitter Cut-off Current

(IE = 0)

VEB = 3 V

for STZT2222

for STZT2222A

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 10

µA

for STZT2222

for STZT2222A

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

for STZT2222

for STZT2222A

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10

µA

for STZT2222

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

for STZT2222

for STZT2222A

IC = 500 mA

IB = 50 mA

for STZT2222

for STZT2222A

0.4

0.3

1.6

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

for STZT2222

for STZT2222A

IC = 500 mA

IB = 50 mA

for STZT2222

for STZT2222A

0.6

1.3

1.2

2.6

hFE

∗

DC Current Gain

IC = 0.1 mA

VCE = 10 V

IC = 1 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 150 mA

VCE = 1 V

IC = 500 mA

VCE = 10 V

for STZT2222

for STZT2222A

IC = 10 mA

VCE = 10 V Tc = -55

o C

for STZT2222

100

300

STZT2222/STZT2222A

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