STZT2907 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rthj-tab

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Collecor Tab

Max

83.3

oC/W

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

Tamb = 125

-20

-10

µA

ICEX

Collector Cut-off

Current (VBE = 0.5V)

VCE = -30 V

for STZT2222A

-50

IBEX

Base Cut-off Current

(VBE = 0.5V)

VCE = -30 V

for STZT2222A

-50

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -10

µA-60

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

for STZT2907

for STZT2907A

-40

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -10

µA-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -150 mA

IB = -15 mA

IC = -500 mA

IB = -50 mA

-0.4

-1.6

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -150 mA

IB = -15 mA

IC = -500 mA

IB = -50 mA

-1.3

-2.6

hFE

∗

DC Current Gain

IC = -0.1 mA

VCE = -10 V

for STZT2907

for STZT2907A

IC = -1 mA

VCE = -10 V

for STZT2907

for STZT2907A

IC = -10 mA

VCE = -10 V

for STZT2907

for STZT2907A

IC = -150 mA

VCE = -10 V

IC = -500 mA

VCE = -10 V

for STZT2907

for STZT2907A

100

300

Transition Frequency

IC = -10 mA VCE = -10 V f = 100 MHz

200

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = -10 V

f = 1 MHz

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = -2 V

f = 1 MHz

Delay Time

IC = -150 mA

IB1 = -15 mA

VCC = -30 V

Rise Time

ton

Turn-on Time

Storage Time

IC = -150 mA

IB1 = -IB1 = -15 mA

VCC = -30 V

Fall Time

toff

Turn-off Time

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

STZT2907/STZT2907A

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