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STZT5401 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STZT5401 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE INTERNAL SCHEMATIC DIAGRAM October 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -180 V VCEO Collector-Emitter Voltage (IB = 0) -160 V VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.6 A Ptot Total Dissipation at Tc = 25 o C -1.5 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 2 3 SOT-223 1/4 |
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