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MBRF735 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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MBRF735 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() MBR(F,B)735 thru MBR(F,B)760 Vishay General Semiconductor Document Number: 88680 Revision: 08-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Characteristics 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 10 100 Instantaneous Forward Voltage (V) Pulse Width = 300 µs 1 % Duty Cycle T J = 125 °C T J = 25 °C MBR735 - MBR745 MBR750 & MBR760 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 MBR735 - MBR745 MBR750 & MBR760 T J = 125 °C T J = 25 °C T J = 75 °C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal Impedance 0.1 1 10 100 10 100 1000 10 000 MBR735 - MBR745 MBR750 & MBR760 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Reverse Voltage (V) 0.01 0.1 1 10 100 0.1 1 10 100 t - Pulse Duration (s) |
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