THD200FI datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.2

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =1500 V

Tj = 125

0.2

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IC =0)

IC = 100 mA

700

VEBO

Emitt er-Base Voltage

(IB =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =7 A

IB = 1.5 A

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =7 A

IB = 1.5 A

1.3

hFE

∗

DC Current G ain

IC =7 A

VCE =5 V

IC =7 A

VCE =5 V

Tj =100

o C

6. 5

RESI STIVE LO AD

St orage Time

Fall T ime

VCC =400 V

IC =7 A

IB1 =1.5 A

IB2 = 3.5 A

2.1

140

3.1

210

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC = 7 A

f = 31250 Hz

IB1 =1.5 A

IB2 =-3. 5 A

Vc eflybac k = 1200 sin







6





3.5

320

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =7 A

f =64 KHz

IB1 =1.5 A

IB2 =-3. 5 A

Vc eflybac k = 1200 sin







6





1.7

215

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

THD200FI

2/7

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