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THD218 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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THD218 Arkusz danych(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collect or Cut-off Current (VBE =0) VCE =1500 V VCE =1500 V Tj = 125 oC 0.2 2 mA mA IEBO Emitt er Cut-off Current (IC =0) VEB =5 V 300 mA VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =4 A IB =1 A 1.5 V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =4 A IB =1 A 1.3 V hFE ∗ DC Current G ain IC =4 A VCE =5 V IC =4 A VCE =5 V Tj = 100 oC 5 3. 5 10 ts tf INDUCTIVE LOAD St orage Time Fall T ime IC = 4 A f = 15625 Hz IB1 =1 A IB2 =-2 A Vc eflybac k = 1050 sin π 5 10 6 tV 4.7 0. 48 µs µs VF Diode Forward Volt age IF =4 A 2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance THD218DHI 2/6 |
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