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VNP10N06 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części VNP10N06
Szczegółowy opis  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNP10N06 Arkusz danych(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =16 V
Id =1 A
Vgen =7 V
Rgen =10
Ω
(see f igure 3)
1100
550
200
100
1600
900
400
200
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
VDD =16 V
Id =1 A
Vgen =7 V
Rgen =1000
Ω
(see f igure 3)
1.2
1
1.6
1.2
1.8
1.5
2.3
1.8
µs
µs
µs
µs
(di/ dt)on
Turn-on Current Slope
VDD =16 V
ID =1 A
Vin =7 V
Rgen =10
Ω
1.5
A/
µs
Qi
Total Input Charge
VDD =12 V
ID =1 A
Vin =7 V
13
nC
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VSD (
∗)Forward On Voltage
ISD =1 A
Vin =VIL
0.8
1.6
V
trr (
∗∗)
Qrr (
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 1 A
di/dt = 100 A/
µs
VDD =30 V
Tj =25
oC
(see t est circuit, figure 5)
125
0. 22
3.5
ns
µC
A
PROTECTION
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
Ilim
Drain Current Limit
Vin =7 V
VDS =13 V
6
10
15
A
tdlim (
∗∗) Step Response
Current Limit
Vin =7 V
VDS step from 0to 13V
12
20
µs
Tjsh (
∗∗) Overtemperature
Shutdown
150
oC
Tjrs (
∗∗) Overtemperature Reset
135
oC
Eas (
∗∗) Single Pulse
Avalanche Energy
st arting Tj =25
oCVDD =24 V
Vin =7 V
Rgen =1 K
Ω L= 10 mH
250
mJ
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
VNP10N06
3/11



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