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DN3545 Arkusz danych(PDF) 1 Page - Supertex, Inc |
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DN3545 Arkusz danych(HTML) 1 Page - Supertex, Inc |
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1 / 4 page ![]() 1 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. DN3545 BVDSX /RDS(ON) IDSS BV DGX (max) (min) TO-92 TO-243AA* Die 450V 20Ω 200mA DN3545N3 DN3545N8 DN3545ND Advanced DMOS Technology These depletion-mode (normally-on) transistors utilize an ad- vanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transis- tors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Constant current sources ❏ Power supply circuits ❏ Telecom Absolute Maximum Ratings Drain-to-Source Voltage BV DSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Package Options Order Number / Package * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. N-Channel Depletion-Mode Vertical DMOS FETs Note: See Package Outline section for dimensions. TO-243AA (SOT-89) G D S D TO-92 S G D Product marking for TO-243AA: Where ❋ = 2-week alpha date code DN5M ❋ |
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